VS-50RIA series www.vishay.com vishay semiconductors revision: 19-nov-15 1 document number: 93711 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 medium power phase control thyristors (stud version), 50 a features ? high current rating ? excellent dynamic characteristics ? dv/dt = 1000 v/s option ? superior surge capabilities ? standard package ? metric threads version available ? types up to 1200 v v drm /v rrm ? material categorization: fo r definitions of compliance please see www.vishay.com/doc?99912 typical applications ? phase control applications in converters ? lighting circuits ? battery charges ? regulated power supplies and temperature and speed control circuit ? electrical specifications notes (1) units may be broken over non-repetitively in the off-state direction without damage, if di /dt does not exceed 20 a/s (2) for voltage pulses with t p ? 5 ms product summary package to-208ac (to-65) diode variation single scr i t(av) 50 a v drm /v rrm 100 v to 1200 v v tm 1.60 v i gt 100 ma t j -40 c to 125 c to-208ac (to-65) major ratings and characteristics parameter test conditions values units i t(av) 50 a t c 94 c i t(rms) 80 a i tsm 50 hz 1430 a 60 hz 1490 i 2 t 50 hz 10.18 ka 2 s 60 hz 9.30 v drm /v rrm 100 to 1200 v t q typical 110 s t j -40 to +125 c voltage ratings type number voltage code v drm /v rrm , maximum repetitive peak and off-state voltage (1) v v rsm , maximum non-repetitive peak voltage (2) v i drm /i rrm maximum at t j = t j maximum ma VS-50RIA 10 100 150 15 20 200 300 40 400 500 60 600 700 80 800 900 100 1000 1100 120 1200 1300
VS-50RIA series www.vishay.com vishay semiconductors revision: 19-nov-15 2 document number: 93711 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 note (1) available with dv/dt = 1000 v/s, to co mplete code add s90 i.e. 50ria120s90 absolute maximum ratings parameter symbol test conditions values units maximum average on-state current ? at case temperature i t(av) 180 sinusoidal conduction 50 a 94 c maximum rms on-state current i t(rms) 80 a maximum peak, one-cycle ? non-repetitive surge current i tsm t = 10 ms no voltage reapplied sinusoidal ha lf wave, ? initial t j = t j maximum 1430 a t = 8.3 ms 1490 t = 10 ms 100 % v rrm ? reapplied 1200 t = 8.3 ms 1255 maximum i 2 t for fusing i 2 t t = 10 ms no voltage reapplied 10.18 ka 2 s t = 8.3 ms 9.30 t = 10 ms 100 % v rrm ? reapplied 7.20 t = 8.3 ms 6.56 maximum i 2 ? t for fusing i 2 ? t t = 0.1 to 10 ms, no voltage reapplied, ? t j = t j maximum 101.8 ka 2 ? s low level value of threshold voltage v t(to)1 (16.7 % x ? x i t(av) < i < ? x i t(av) ), t j = t j maximum 0.94 v high level value of threshold voltage v t(to)2 ( ? x i t(av) < i < 20 x ? x i t(av) ), t j = t j maximum 1.08 low level value of on-state ? slope resistance r t1 (16.7 % x ? x i t(av) < i < ? x i t(av) ), t j = t j maximum 4.08 m ? high level value of on-state ? slope resistance r t2 ( ? x i t(av) < i < 20 x ? x i t(av) ), t j = t j maximum 3.34 maximum on-state voltage v tm i pk = 157 a, t j = 25 c 1.60 v maximum holding current i h t j = 25 c, anode supply 22 v, resistive load, ? initial i t = 2 a 200 ma latching current i l anode supply 6 v, resistive load 400 switching parameter symbol test conditions values units maximum rate of ? rise of turned-on current v drm ? 600 v di/dt t c = 125 c, v dm = rated v drm , ? gate pulse = 20 v, 15 ? , t p = 6 s, t r = 0.1 s maximum ? i tm = (2 x rated di/dt) a 200 a/s v drm ? 1600 v 100 typical delay time t d t c = 25 c, v dm = rated v drm , i tm = 10 a dc resistive circuit ? gate pulse = 10 v, 15 ? source, t p = 20 s 0.9 s typical turn-off time t q t c = 125 c, i tm = 50 a, reapplied dv/dt = 20 v/s ? dir/dt = - 10 a/s, v r = 50 v 110 blocking parameter symbol test conditions values units maximum critical rate of rise of ? off-state voltage dv/dt t j = t j maximum linear to 100 % rated v drm 200 v/s t j = t j maximum linear to 67 % rated v drm 500 (1)
VS-50RIA series www.vishay.com vishay semiconductors revision: 19-nov-15 3 document number: 93711 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 note ? the table above shows the increment of thermal resistance r thjc when devices operate at different conduction angles than dc ? ? triggering parameter symbol test conditions values units maximum peak gate power p gm t j = t j maximum, t p ? 5 ms 10 w maximum average gate power p g(av) 2.5 maximum peak positi ve gate current i gm 2.5 a maximum peak positi ve gate voltage +v gm 20 v maximum peak negati ve gate voltage -v gm 10 dc gate current required to trigger i gt t j = - 40 c maximum required gate trigger current/voltage are the lowest ? value which will trigger all units 6 v anode to cathode applied 250 ma t j = 25 c 100 t j = 125 c 50 dc gate voltage required to trigger v gt t j = - 40 c 3.5 v t j = 25 c 2.5 dc gate current not to trigger i gd t j = t j maximum, ? v drm = rated voltage maximum gate cu rrent/voltage not to trigger is the maximum value which will not trigger any unit with rated v drm anode to cathode applied 5.0 ma dc gate voltage not to trigger v gd t j = t j maximum 0.2 v thermal and mechanical specifications parameter symbol test conditions values units maximum operating junction and ? storage temperature range t j , t stg -40 to +125 c maximum thermal resistance, ? junction to case r thjc dc operation 0.35 k/w maximum thermal resistance, ? case to heat sink r thcs mounting surface, smooth, flat and greased 0.25 allowable mounting torque non-lubricated threads 3.4 + 0 - 10 % (30) n m (lbf in) lubricated threads 2.3 + 0 - 10 % (20) approximate weight 28 g 1.0 oz. case style see dime nsions - link at the end of datasheet to-208ac (to-65) ? r thjc conduction conduction angle sinusoidal conduction rectangular conduction test conditions units 180 0.078 0.057 t j = t j maximum k/w 120 0.094 0.098 90 0.120 0.130 60 0.176 0.183 30 0.294 0.296
VS-50RIA series www.vishay.com vishay semiconductors revision: 19-nov-15 4 document number: 93711 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 1 - current rati ngs characteristics fig. 2 - current rati ngs characteristics fig. 3 - on-state powe r loss characteristics fig. 4 - on-state powe r loss characteristics fig. 5 - maximum non-re petitive surge current fig. 6 - maximum non-re petitive surge current 90 100 110 120 130 0 102030405060 30 60 90 120 180 average on-state current (a) maximum allowable case temperature (c) conduction angle 50ria series r (dc) = 0.35 k/w thjc 80 90 100 110 120 130 0 1020304050607080 dc 30 60 90 120 180 average on-state current (a) maximum allowable case temperature (c) conduction period 50ria series r (dc) = 0.35 k/w thjc 0 10 20 30 40 50 60 70 80 0 1020304050 rms limit conduction angle 180 120 90 60 30 maximum average on-state power loss (w) average on-state current (a) 50ria series t = 125c j 0 10 20 30 40 50 60 70 80 90 100 0 1020304050607080 dc 180 120 90 60 30 rms limit conduction period maximum average on-state power loss (w) average on-state current (a) 50ria series t = 125c j 600 700 800 900 1000 1100 1200 1300 110100 number of equal amplitude half cycle current pulses (n) peak half sine wave on-state current (a) at any rated load condition and with rated v applied following surge. rrm initial t = 125c @ 60 hz 0.0083 s @ 50 hz 0.0100 s j 50ria series 500 600 700 800 900 1000 1100 1200 1300 1400 1500 0.01 0.1 1 peak half sine wave on-state current (a) pulse train duration (s) maximum non repetitive surge current versus pulse train duration. control of conduction may not be maintained. initial t = 125c no voltage reapplied rated v reapplied rrm j 50ria series
VS-50RIA series www.vishay.com vishay semiconductors revision: 19-nov-15 5 document number: 93711 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 7 - forward voltage drop characteristics fig. 8 - thermal impedance z thjc characteristics fig. 9 - gate characteristics 1 10 100 1000 0.5 1 1.5 2 2.5 3 3.5 4 4.5 t = 25c j instantaneous on-state current (a) instantaneous on-state voltage (v) t = 125c j 50ria series 0.01 0.1 1 0.001 0.01 0.1 1 10 square wave pulse duration (s) thj-hs steady state value r = 0.35 k/w thj-hs transient thermal impedance z (k/w) 50ria series 0.1 1 10 100 0.001 0.01 0.1 1 10 100 1000 vgd igd (b) (a) tj=25 c tj=-40 c (1) (2) instantaneous gate current (a) instantaneous gate voltage (v) a) recommended load line for b) recommended load line for tr<=1 s rectangular gate pulse rated di/dt : 20v, 30 ohms; tr<=0.5 s <=30% rated di/dt : 20v, 65 ohms (1) pgm = 10w, tp = 5ms (2) pgm = 20w, tp = 2.5ms (3) pgm = 50w, tp = 1ms (4) pgm = 100w, tp = 500s (3) (4) tj=125 c 50ria series frequency limited by pg(av)
VS-50RIA series www.vishay.com vishay semiconductors revision: 19-nov-15 6 document number: 93711 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 ordering information table links to related documents dimensions www.vishay.com/doc?95334 - current code - essential part number - voltage code x 10 = v rrm (see voltage ratings table) - none = stud base to-208ac (to-65) 1/4" 28unf-2 a m = stud base to-208ac (to-65) m6 x 1 - critical dv/dt: none = 500 v/s (standard value) s90 = 1000 v/s (special selection) device code 5 1 3 2 4 50 ria 120 s90 m 3 4 6 5 2 vs- 6 1 - vishay semiconductors product
outline dimensions www.vishay.com vishay semiconductors revision: 15-jun-16 1 document number: 95334 for technical questions within your region: diodesamercas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 to-208ac (to-65) dimensions in millimeters (inches) 5.1/7.6 (0.2/0.3) ? 4.1 (? 0.16) ? 1.5 (? 0.06) 3 min. (0.118 min.) 2.5/3.6 (0.1/0.14) ? 15 (? 0.59) 1/4"-28unf-2a for metric device m6 x 1 1.7/1.8 (0.06/0.07) 2.7 (0.106) 31 max. (1.22 max.) ? 19.2 (? 0.75) 10.7/11.5 (0.42/0.46) 22.4 max. (0.88 max.) 14.5 max. (0.57 max.) across flats 0.94 0.04 0.55 0.03 17.2/17.35 (0.67/0.68)
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